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2SD600

SavantIC
Part Number 2SD600
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 3, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCR...
Datasheet PDF File 2SD600 PDF File

2SD600
2SD600

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.
datasheet4u.
com DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD600 2SD600K Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 2SD600 2SD600K Open collector Open base CONDITIONS Open emitter VALUE 100 120 100 120 5 1 2 1 8 150 -55~150 V A A W V UNIT V VCEO VEBO IC ICM PD Tj Tstg SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD600 IC=1mA; RBE== 2SD600K 2SD600 IC=10µA ;IE=0 2SD600K IE=10µA ;IC=0 IC=0.
5A ;IB=50mA IC=0.
5A ;IB=50mA VCB=50V; IE=0 VEB=4V; IC=0 IC=50mA ; VCE=5V IC=0.
5A ; VCE=5V IC=50mA ; VCE=10V f=1MHz ; VCB=10V CONDITIONS www.
datasheet4u.
com 2SD600 2SD600K SYMBOL MIN 100 TYP.
MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 120 100 V 120 5 0.
4 1.
2 1 1 60 20 130 20 MHz pF 320 V V V µA µA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Switching times tf toff tstg Fall time Turn-off time Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.
1 0.
5 0.
7 µs µs µs hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com 2SD600 2SD600K Fig.
2 Outlin...


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