isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
3
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC≤90℃
TJ
Junction Temperature
6
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SD627
isc website：www.
iscsemi.
com
1 isc & iscsem...