isc Silicon
NPN Power
Transistors
2SD1235
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.
4V(Max)@ IC= 3A ·Large Current Capacity ·Complement to Type 2SB919 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Large current switching of relay drivers, high-speed
inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
...