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2SD1202

INCHANGE
Part Number 2SD1202
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1202 DESCRIPTION ·Low Collector Saturation Volt...
Datasheet PDF File 2SD1202 PDF File

2SD1202
2SD1202

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1202 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current 10 ICM Collector Current-peak 20 IB Base Current 1 PC Collector Power Dissipation @TC=25℃ 100 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
0 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1202 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.
6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.
8 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 8 A; IB= 100mA VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ VCE= 400V;IB= 0 2.
2 V 1.
0 5.
0 mA 1.
0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 20 mA hFE-1 DC Current Gain IC= 5A; VCE= 3V 750 hFE-2 DC Current Gain IC= 10A; VCE= 3V 100 VECF C-E Diode Forward Voltage IF= 10A 2.
8 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
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