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2SD1205A

Panasonic Semiconductor
Part Number 2SD1205A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 ...
Datasheet PDF File 2SD1205A PDF File

2SD1205A
2SD1205A

Overview
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.
9±0.
1 0.
4 Unit: mm 2.
5±0.
1 1.
0 1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1 s Features q 1.
5 1.
5 R0.
9 R0.
9 q 0.
85 0.
55±0.
1 1.
25±0.
05 0.
45±0.
05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) 3 2 1 Ratings 30 60 25 50 5 750 500 400 150 –55 ~ +150 Unit V 1:Base 2:Collector 3:Emitter 2.
5 2.
5 emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C EIAJ:SC–71 M Type Mold Package Internal Connection C B ≈200Ω E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1205 2SD1205A 2SD1205 2SD1205A (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.
5mA*2 IC = 500mA, IB = 0.
5mA*2 VCB = 10V, IE = –50mA, f = 200MHz 150 *2 min typ max 100 100 4.
1±0.
2 q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000.
A shunt resistor is omitted from the driver.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.
0±0.
1 R 0.
4.
5±0.
1 7 Unit nA nA V 30 60 25 50 5 4000 20000 2.
5 3 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency *1h V V MHz Pulse measurement FE Rank classification Q R 4000 ~ 10000 8000 ~ 20000 Rank hFE 1 Transistor PC — Ta Collector to emitter saturation voltage VCE(sat) (V) 500 100 30 10 3 25˚C 1 –25˚C 0.
3 0.
1 0.
03 ...


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