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2SD1204

INCHANGE
Part Number 2SD1204
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1204 DESCRIPTION ·Low Collector Saturation Volt...
Datasheet PDF File 2SD1204 PDF File

2SD1204
2SD1204

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1204 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current 15 ICM Collector Current-peak 30 IB Base Current 1 PC Collector Power Dissipation @TC=25℃ 100 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
0 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1204 MIN TYP MAX UNIT VBCEO(SUS) Collector-Emitter Sustaining Voltage I = CB B 50mA; I = BB B 0 400 V VBCE(sat)-1 Collector-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA 1.
6 V VBCE(sat)-2 Collector-Emitter Saturation Voltage I = CB B 10 A; I = BB B 250mA 1.
8 V VBCE(sat)-3 Collector-Emitter Saturation Voltage I = CB B 12 A; I = BB B 300mA 2.
0 V VBBE(sat)-1 Base-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA 2.
2 V VBBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current I = CB B 10 A; I = BB B 250mA V = CE B B 500V;VBBE =B 0 V = CE B B 500V;VBBE =B 0;TjB B= 125℃ V = CE B B 400V; I = BB B 0 2.
5 V 0.
1 0.
5 mA 0.
1 mA IEBO Emitter Cutoff Current VBEB= 5V; I = CB B 0 20 mA hFE-1 DC Current Gain I = CB B 5A ; VCE= 3V 750 hFE-2...


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