isc Silicon
NPN Power
Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.
4V(Max)@ IC= 6A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for relay drivers , high-speed inverters,
converters,and other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
...