isc Silicon
NPN Darlington Power
Transistor
2SD1296
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.
)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VCEO(SUS) Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
15
A
ICM
Coll...