isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: VCBO= 1300V (Min.
) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
1300
V
VCES
Collector-Emitter Voltage
1300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
18
A
IB
Base Current- Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.
5
...