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2SD1888

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD1888 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1339 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOL...

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