isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·High DC Current Gain-
: hFE= 3500( Min.
) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage-
: VCE(sat)= 3.
0V(Max)@ (IC= 7A, IB= 7mA) ·Complement to Type 2SB1470 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ ...