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2SD2204

Part Number	2SD2204
Manufacturer	Toshiba Semiconductor
Description	NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pul...
Datasheet	2SD2204 PDF File

Overview

2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.
5 A) Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1.
5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC I Pulse I ymbol VCBO VCEO VEBO C CP Rating 65 ± 10 65 ± 10 7 4 6 0.
5 2.
0 25 Unit V V V A A W °C IB PC Tj 150 Tstg JEDEC JEITA TOSHIBA ― SC-67 2-10R1A −55 to 150 °C Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 http://www.
Datasheet4U.
com 2SD2204 Electrical Characteristics (Tc = 25°C) Characteristics S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain ymbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) ton Input Switching time Storage time tstg IB1 20 μs Test Condition VCB = 45 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 3 V, IC = 1.
5 A VCE = 3 V, IC = 3 A IC = 1.
5 A, IB = 3 mA IC = 3 A, IB = 12 mA IC = 1.
5 A, IB = 3 mA Output 20 Ω Min ― ― 55 65 75 2000 1000 ― ― ― ― 1.
0 ― ― ― ― ― 2.
0 ― 15000 ― 1.
5 2.
0 V V...

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