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2SD2210

Part Number	2SD2210
Manufacturer	Panasonic Semiconductor
Description	Silicon NPN epitaxial planer type Transistor
Published	Apr 3, 2005
Detailed Description	Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converte...
Datasheet	2SD2210 PDF File

Overview

Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 2.
6±0.
1 0.
4max.
s Features q q q Low collector to emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High foward current transfer ratio hFE.
(Ta=25˚C) Ratings 25 20 12 1 0.
5 * 45° 1.
0–0.
2 +0.
1 0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 4.
0–0.
20 0.
4±0.
04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 2 1 marking 1 150 –55 ~ +150 EIAJ:SC–62 Mini Power Type Package Marking symbol : IK Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.
5A*2 VCE = 2V, IC = 1A*2 IC = 0.
5A, IB = 20mA IC = 0.
5A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz min typ max 1 25 20 12 200 60 0.
13 0.
4 1.
2 200 10 1.
0 *2 800 Pulse measurement *1h FE1 Rank classification Rank hFE1 R 200 ~ 350 IKR S 300 ~ 500 IKS T 400 ~ 800 IKT Measurement circuit 1kΩ IB=1mA f=1kHz V=0.
3V VB VV VA Marking Symbol VB Ron= !1000(Ω) VA–VB 2.
5±0.
1 +0.
25 Unit µA V V V V V MHz pF Ω 1 Transistor PC — Ta 1.
4 2SD2210 IC — VCE Collector to emitter saturation voltage VCE(sat) (V)...

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