isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F
·Complement to Type BD202F/204F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD201F
60
VCBO
Collector-Base Voltage
V
BD203F
60
BD201F
45
VCEO
Collector-Emitter Voltage
V
BD203F
60
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
Base Current
PC
Collector Power Dissipation @ T...