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BD202

Inchange Semiconductor
Part Number BD202
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 15, 2016
Detailed Description isc Silicon PNP Power Transistor BD202/204 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- B...
Datasheet PDF File BD202 PDF File

BD202
BD202

Overview
isc Silicon PNP Power Transistor BD202/204 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complement to Type BD201/203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD202 -60 VCBO Collector-Base Voltage V BD204 -60 BD202 -45 VCEO Collector-Emitter Voltage V BD204 -60 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak tp≤10ms -12 A ICSM Collector Current-Peak tp≤2ms -25 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage BD202 BD204 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain BD202 BD204 fT Current-Gain—Bandwidth Product Switching Times ton Turn-On Time toff Turn-Off Time CONDITIONS IC= -50mA ;IB= 0 IC= -1mA ;IE= 0 IE= -1mA ;IC= 0 IC= -3A; IB= -0.
3A IC= -6A; IB= -0.
6A IC= -6A; IB= -0.
6A IC= -3A ; VCE= -2V VCE= -30V; IB= 0 VCB= -40V;IE= 0; TJ= 150℃ VEB= -5V; IC=0 IC= -3A ; VCE= -2V IC= -2A ; VCE= -2V IC= -0.
3A ; VC...


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