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BD201F

INCHANGE
Part Number BD201F
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Mi...
Datasheet PDF File BD201F PDF File

BD201F
BD201F

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201F 60 VCBO Collector-Base Voltage V BD203F 60 BD201F 45 VCEO Collector-Emitter Voltage V BD203F 60 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.
3 ℃/W BD201F/203F isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD201F/203F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage BD201F BD203F IC= 50mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.
6A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.
6A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VCB= VCBO;IE= 0 VCB= 1/2VCBO;IE= 0; TJ= 150℃ VEB= 5V; IC=0 hFE-1 DC Current Gain BD201F BD203F IC= 3A ; VCE= 2V IC= 2A ; VCE= 2V hFE-2 DC Current Gain IC= 1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.
3A ; VCE= 3V, ftest= 1.
0MHz Switching Times ton Turn-On Time toff Turn-Off Time IC= 2A; IB1= -IB2= 0.
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