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BD203

Inchange Semiconductor
Part Number BD203
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Dec 3, 2012
Detailed Description isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD...
Datasheet PDF File BD203 PDF File

BD203
BD203

Overview
isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201 60 VCBO Collector-Base Voltage V BD203 60 BD201 45 VCEO Collector-Emitter Voltage V BD203 60 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak tp≤10ms 12 A ICSM Collector Current-Peak tp≤2ms 25 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage BD201 BD203 IC= 50mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.
6A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.
6A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICBO Collector Cutoff Current VCB= 40V;IE= 0; TJ= 150℃ IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain BD201 BD203 IC= 3A ; VCE= 2V IC= 2A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.
3A ; VCE= 3V, ftest= 1.
0MHz Switching Times ton Turn-On Time toff Turn-Off Time ...


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