isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.
15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD226
45
VCBO
Collector-Base Voltage BD228
60
BD230
100
BD226
45
VCEO
Collector-Emitter Voltage BD228
60
BD230
80
VCER
Collector-Emitter Voltage(RBE= 1kΩ)
BD226
45
BD228
60
BD230
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
1.
5
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC≤62℃
TJ
Junction ...