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BU323AP

Part Number BU323AP
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon Darlington NPN Power Transistor BU323AP DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40...
Datasheet BU323AP





Overview
isc Silicon Darlington NPN Power Transistor BU323AP DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.
) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 475 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 125 W 150 ℃ Tstg Storage Tem...






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