DatasheetsPDF.com

BU323A

INCHANGE
Part Number BU323A
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor BU323A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·DA...
Datasheet PDF File BU323A PDF File

BU323A
BU323A


Overview
isc Silicon NPN Power Transistor BU323A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.
) ·DARLINGTON ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU323A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6 A; IB= 120mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 300mA VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 6V ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 3A ; VCE= 6V hFE-2 DC Current Gain IC= 6A ; VCE= 6V hFE-3 DC Current Gain IC= 10A ; VCE= 6V VECF C-E Diode Forward Voltage IF= 10A COB Output Capacitance IE= 0; VCB= 10V; f= 100kHz Switching Times ts Storage Time tf Fall Time VCC= 12V; IC= 6A, IB1= -IB2= 0.
3A MIN TYP MAX UNIT 400 V 1.
5 V 1.
7 V 2.
7 V 2.
2 V 3.
0 V 2.
5 V 1.
0 mA 40 mA 300 150 2000...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)