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BU323AP

INCHANGE
Part Number BU323AP
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon Darlington NPN Power Transistor BU323AP DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40...
Datasheet PDF File BU323AP PDF File

BU323AP
BU323AP

Overview
isc Silicon Darlington NPN Power Transistor BU323AP DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.
) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 475 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon Darlington NPN Power Transistor BU323AP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA 1.
5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA 1.
7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA 2.
7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6 A; IB= 120mA 2.
2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 300mA 3.
0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 6V 2.
5 V ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 1.
0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 40 mA hFE-1 DC Current Gain IC= 3A ; VCE= 6V 300 hFE-2 DC Current Gain IC= 6A ; VCE= 6V 150 2000 hFE-3 DC Current Gain IC= 10A ; VCE= 6V 50 VECF C-E Diode Forward Voltage IF= 10A 3.
5 V COB Output Capacitance IE= 0; VCB= 10V; f= 100kHz 165 pF Switching Times ts Storage Time tf Fall Time V...


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