isc Silicon
NPN Power
Transistor
BUX39
DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching-control amplifiers, power gates,
switching
regulators, power switching circuits converters, inverters and control circuits.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCER VCEO
Collector-Base Voltage
Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage RBE= 100Ω
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continu...