isc Silicon
NPN Power
Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250
V
VCEO(SUS) Collector-Emitter Voltage
200
V
VCEX
Collector-Emitter Voltage VBE= -2.
5V
250
V
VCER
Collector-Emitter Voltage RBE= 100Ω
240
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current...