isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency and efficiency
converters,switching
regulators and motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25℃
70
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,J...