isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·Motor control ·High frequency and efficiency converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
800
V
VCEO
Collector-Emitter Voltage
400
V
VCER
Collector-Emitter Voltage RBE= 50Ω
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25℃...