2SC5002

2SC5000 : TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) ma.

2SC5001 : Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit c.

2SC5002 : 2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5002 1500 800 6 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25°C) 2SC5002 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ Unit µA mA µA V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM100.

2SC5002 : ·With TO-3PML package ·High voltage switching APPLICATIONS 2SC5002 ·Display horizontal deflection output; switching regulator general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 7 14 3.5 80 150 -55~150 UNIT V V V A A A W www.datasheet4u.com SavantIC Semiconductor Product Specific.

2SC5003 : Built-in Damper Diode sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5003 1500 800 6 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SC5003 (Ta=25°C) 2SC5003 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Unit µA mA mA V Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 0.8±0.2 15.6±0.2 23.0±0.3 9.5±0.2 Equivalent circuit B C ( 50 Ω ) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB Applicat.

2SC5003 : ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 7 14 3.5 80 150 -55~150 UNIT V V V A A A W www.datasheet4u.com SavantIC Sem.

2SC5004 : The 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 2 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES • • • 0.5 High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) Ultra Super Mini Mold Package. (1.6 mm × 0.8 mm) 1.6 ± 0.1 1.0 0.2+0.1 –0 0.5 3 1 ORDERING INFORMATION PART NUMBER 2SC5004 2SC5004 – T1 QUANTITY 50 pcs./unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 0.75 ±.

2SC5005 : The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 2 1.6 ± 0.1 1.0 0.2+0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES • • • High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) Ultra Super Mini Mold Package. (1.6 mm × 0.8 mm) 0.5 3 1 ORDERING INFORMATION 0.6 PART NUMBER 2SC5005 2SC5005 – T1 QUANTITY 50 pcs./unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 0.

2SC5006 : The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DIMENSIONS in millimeters • High |S21e|2 : 9 dB TYP. (@ VCE = 3 V, IC = 7 m.

2SC5006 : ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.Junction Temperature 100 mA 125 mW 150 ℃ Tstg Storage Temperature Range -60~150 ℃ 2SC5006 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC5006 .

2SC5006 : The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Ultra Super M.

2SC5006 : The UTC 2SC5006 is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low noise figure, high DC current gain and high current capability achieve a very wide dynamic range and excellent linearity. The UTC 2SC5006 is suitable for low noise and small signal amplifiers from VHF band to UHF band.  FEATURES * High DC current gain * High current capability * Low noise figure 3 2 1 SOT-523  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 2SC5006L-AN3-R 2SC5006G-AN3-R Note: Pin Assignment: B: Base E: Emitter C: Collector Package SOT-523 Pin Assignment 123 BEC Packing Tape Reel 2SC5006G-AN3-R (1)Packing Type (2)Package Type (3)Green .

2SC5007 : The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 0.5 1.6 ± 0.1 1.0 0.2+0.1 –0 0.3 +0.1 –0 0.15 +0.1 –0.05 PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0..

2SC5007 : The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Ultra Supe.

2SC5008 : The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 2 0.5 1.6 ± 0.1 1.0 0.2+0.1 –0 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5 FEATURES • Low Voltage Use. • High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) • Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) • High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 .

2SC5009 : The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique. 1.6± 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6± 0.1 0.8± 0.1 2 0.2+0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5 FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF • High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 dB TYP. (@ VCE = 3 V, IC = 5 .