isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current: ID= 33A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 85mΩ(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High efficiency switch mode power supplies ·Active power factor correction ·Electronic lamp ballasts based on half bridge topology
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
33
A
IDM
Drain Current-Single (pulsed)
132
A
PD
Total Dissipation @TC=25℃
180
W
Tj
Max.
Op...