isc P-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤130mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Built in gate protection diode
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
±12
IDM
Drain Current-Single Pulsed
±30
PD
Total Dissipation @TC=25℃
23
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
2SJ598
isc website：www.
iscsemi.
cn
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isc P-Channel MOSFET T...