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2SJ506L

Hitachi Semiconductor
Part Number 2SJ506L
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition...
Datasheet PDF File 2SJ506L PDF File

2SJ506L
2SJ506L

Overview
2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st.
Edition Features • Low on-resistance R DS(on) = 0.
065 Ω typ.
(at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DS...


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