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2SJ505S Datasheet PDF


Part Number 2SJ505S
Manufacturer Hitachi Semiconductor
Title P-Channel MOSFET
Description 2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resista...
Features
• Low on-resistance R DS(on) = 0.017Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volta...

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2SJ501 : Ordering number:ENN5948A P-Channel Silicon MOSFET 2SJ501 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SJ501] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 Ratings –20 ±10 –0.5 –2.0 0.25 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical.

2SJ502 : Ordering number:ENN6178A P-Channel Silicon MOSFET 2SJ502 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 Ratings –30 ±20 –0.5 –2.0 0.25 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical C.

2SJ503 : Ordering number:ENN5932 P-Channel Silicon MOSFET 2SJ503 DC/DC Converter Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2083B [2SJ503] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SJ503] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 0 to 0.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-supp.

2SJ504 : 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G S 1 2 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings –60 ±20 –20 –80 –20 –20 34 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* .

2SJ505 : 2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings –60 ±20 –50 –200 –50 –50 214 75 150 .

2SJ505L : 2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings –60 ±20 –50 –200 –50 –50 214 75 150 .

2SJ506 : 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch.

2SJ506L : 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch.

2SJ506S : 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch.

2SJ507 : 2SJ507 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 1.0 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energ.

2SJ508 : 2SJ508 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.7 S (typ.) l Low leakage current : IDSS = −100 µA (VDS = −100 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche curr.

2SJ509 : 2SJ509 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.7 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −100 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Ta = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive a.

2SJ511 : 2SJ511 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ511 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.32 Ω (typ.) l High forward transfer admittance : |Yfs| = 1.4 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −30 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanch.

2SJ512 : 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −250 V) l Enhancement−mode : Vth = −1.5~−3.5 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3.

2SJ516 : 2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV) 2SJ516 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.3 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V) z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repe.




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