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2SJ504

Hitachi Semiconductor
Part Number 2SJ504
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Lo...
Datasheet PDF File 2SJ504 PDF File

2SJ504
2SJ504

Overview
2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st.
Edition Features • Low on-resistance R DS(on) = 0.
042Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline TO–220FM D G S 1 2 1.
Gate 2.
Drain 3.
Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings –60 ±20 –20 –80 –20 –20 34 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Ta = 25°C, Rg ≥ 50 Ω, L=100µH 2 2SJ504 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –60 ±20 — — –1.
0 — — 10 — — — — — — — — — Typ — — — — — 0.
042 0.
065 16 1750 800 180 16 100 230 140 –1.
0 100 Max — — –10 ±10 –2.
0 0.
055 0.
095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –20A, VGS = 0 I F = –20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –10A, VGS = –10V*1 I D = –10A, VGS = –4V*1 I D = 10A, VDS = 10V*1 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, ID = –10A RL = 3Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SJ504 Main Characteristics Po...


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