isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.
78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION · Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
3
IDM
Drain Current-Single Pulsed
9
PD
Total Dissipation @TC=25℃
100
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
...