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2SK2607

Part Number 2SK2607
Manufacturer Toshiba Semiconductor
Title Silicon N-Channel MOSFET
Description 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applicat...
Features Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc...

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2SK260 : ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/.

2SK2601 : 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 10 40 125 270 10 12.5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DR.

2SK2601 : isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2601 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation 125 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-.

2SK2602 : 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2602 Switching Regulator Applications z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Ch.

2SK2603 : 2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repeti.

2SK2604 : 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.8 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 640 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20k Ω) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage.

2SK2605 : 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20k Ω) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3.

2SK2606 : 2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive av.

2SK2608 : 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Ch.

2SK2608 : isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3 IDM Drain Current-Single Pulsed 9 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL .




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