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2SK2602

Toshiba Semiconductor
Part Number 2SK2602
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2602 Switching Regulator Applications z ...
Datasheet PDF File 2SK2602 PDF File

2SK2602
2SK2602

Overview
2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2602 Switching Regulator Applications z Low drain−source ON-resistance : RDS (ON) = 0.
9 Ω (typ.
) z High forward transfer admittance : |Yfs| = 5.
5 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 600 ±30 6 24 125 345 6 12.
5 150 −55 to 150 V V V A A W mJ A mJ °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.
0 °C / W 50 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.
8 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an elec...


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