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2SK2605

Toshiba Semiconductor
Part Number 2SK2605
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications ...
Datasheet PDF File 2SK2605 PDF File

2SK2605
2SK2605


Overview
2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.
9 Ω (typ.
) z High forward transfer admittance : |Yfs| = 3.
8 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20k Ω) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 800 800 ±30 5 15 45 370 5 4.
5 150 −55~150 V V V A A W mJ A mJ °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.
78 °C / W 62.
5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Please handle...


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