TTC008 Datasheet PDF

TTC0001 : TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 ○ Power Amplifier Applications • High collector voltage: VCEO = 160 V (min) • Complementary to TTA0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTC0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating Unit 160 V 160 V 5 V 18 A 35 A 9 A 150 W 150 °C −55 to 150 °C 1.BASE 2.COLLECTOR(HEAT SINK) 3.EMITTER JEDEC ― JEITA .

TTC0001 : ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTA0001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 18 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC0001 isc websi.

TTC0002 : TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications • High collector voltage: VCEO = 160 V (min) • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTC0002 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating Unit 160 V 160 V 5 V 18 A 35 A 9 A 180 W 150 °C −55 to 150 °C JEDEC ― JEITA ― 2-21F1A Weight: 9.75 g (typ.) Note.

TTC004 : TOSHIBA Transistor Silicon NPN Epitaxial Type TTC004 ○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V (min) • Complementary to TTA004 • Small collector output capacitance : Cob = 12 pF (typ.) • High transition frequency : fT = 100 MHz (typ.) TTC004 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta=25℃ Tc=25℃ Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB Pc Pc Tj Tstg Rating Unit 160 V 160 V 6 V 1.5 A 2.5 A 0.5 A 1.5 W 10 W 150 °C −55 to.

TTC004B : Bipolar Transistors Silicon NPN Epitaxial Type TTC004B 1. Applications • Audio-Frequency Amplifiers 2. Features (1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: Cob = 12 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTC004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2018 Toshiba Electronic Devices & Storage Corp.

TTC005 : Bipolar Transistors Silicon NPN Triple-Diffused Type TTC005 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features (1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A) (2) High-speed switching: tf = 0.13 µs (typ.) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC005 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 600 V VCEX 600 Collector-emitter voltage VCEO 285 Emitter-base voltage Collector current (DC) Collector current (pulsed) Base c.

TTC007 : TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) • High-speed switching : tf = 85 ns (typ.) TTC007 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current DC IC Pulse ICP 1 A 2 1. BASE 2. EMITTER 3. COLLECTOR Base current IB 0.1 A t = 10 s PC Collector power dissipation 1.1 W DC (Note 1) 0.7 Junction temperature Tj 150 °C Sto.

TTC009 : TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC009 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Tc=25°C Ta=25°C VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 160 V 160 V 80 V 7 V 3 A 5 A 1 A 15 W 2 150 °C −55 to 150 °C JEDEC － JEITA SC-67 TOSHIBA 2-10R1A .