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TTC009

Toshiba
Part Number TTC009
Manufacturer Toshiba
Description NPN Transistor
Published Nov 11, 2013
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC0...
Datasheet PDF File TTC009 PDF File

TTC009
TTC009

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC009 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.
5 V (max)（IC = 1A） • High-speed switching: tstg = 0.
4 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Tc=25°C Ta=25°C VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 160 V 160 V 80 V 7 V 3 A 5 A 1 A 15 W 2 150 °C −55 to 150 °C JEDEC － JEITA SC-67 TOSHIBA 2-10R1A ...


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