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TTC0001

Toshiba
Part Number TTC0001
Manufacturer Toshiba
Description NPN Transistor
Published Nov 11, 2013
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 ○ Power Amplifier Applications • High collector voltage: VCE...
Datasheet PDF File TTC0001 PDF File

TTC0001
TTC0001

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 ○ Power Amplifier Applications • High collector voltage: VCEO = 160 V (min) • Complementary to TTA0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
TTC0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating Unit 160 V 160 V 5 V 18 A 35 A 9 A 150 W 150 °C −55 to 150 °C 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER JEDEC ― JEITA ...


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