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TTC007

Toshiba
Part Number TTC007
Manufacturer Toshiba
Description NPN Transistor
Published Nov 11, 2013
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 High-Speed Switching Applications DC-DC Converter Applications • Hi...
Datasheet PDF File TTC007 PDF File

TTC007
TTC007

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 (IC = 0.
1 A) • Low collector-emitter saturation voltage: VCE(sat) = 0.
12 V (max) • High-speed switching : tf = 85 ns (typ.
) TTC007 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current DC IC Pulse ICP 1 A 2 1.
BASE 2.
EMITTER 3.
COLLECTOR Base current IB 0.
1 A t = 10 s PC Collector power dissipation 1.
1 W DC (Note 1) 0.
7 Junction temperature Tj 150 °C Sto...


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