CMPA601C025D
25 W, 6.
0 - 12.
0 GHz, GaN MMIC, Power Amplifier
Description
Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si
transistors.
This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths...