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CMPA601C025D

Wolfspeed
Part Number CMPA601C025D
Manufacturer Wolfspeed
Description Power Amplifier
Published Apr 8, 2021
Detailed Description CMPA601C025D 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA601C025D is a gallium nitride (GaN) ...
Datasheet PDF File CMPA601C025D PDF File

CMPA601C025D
CMPA601C025D

Overview
CMPA601C025D 25 W, 6.
0 - 12.
0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.
This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
PN: CMPA601C025D Typical Performance Over 6.
0-12.
0 GHz (TC = 25˚C) Parameter 6.
0 GHz 8.
0 GHz Small Signal Gain 40.
0 42.
0 POUT @ PIN = 19 dBm 48.
0 49.
0 POUT @ PIN = 19 dBm 63.
0 79.
0 Power Gain @ PIN = 19 dBm 29.
0 30.
0 PAE @ PIN = 19 dBm 33.
0 49.
0 Note: All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.
1% 10.
0 GHz 43.
0 47.
4 55.
0 28.
4 35.
0 12.
0 GHz 36.
0 47.
3 54.
0 27.
3 32.
0 Units dB dBm W dB % Features • 32 dB Small Signal Gain • • 30 W Typical PSAT Operation up to 28 V • High Breakdown Voltage • High Temperature Operation • Size 0.
172 x 0.
239 x 0.
004 inches Applications • Jamming Amplifiers • Test Equipment Amplifiers • Broadband Amplifiers • Radar Amplifiers Rev 2.
1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.
com CMPA601C025D 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Drain-source Voltage VDSS 84 Gate-source Voltage VGS -10, +2 Storage Temperature TSTG -55, +150 Operating Junction Temperature TJ 225 Maximum Forward Gate Current IGMAX 15 Maximum Drain Current1 IDMAX 0.
6 Maximum Drain Current1 IDMAX 1.
7 Maximum Drain Current1 IDMAX 4.
8 Thermal Resistance, Junction to Case (packaged) RθJC 0.
83 Thermal Resistance, Junction...


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