DatasheetsPDF.com

CMPA601C025F

CREE
Part Number CMPA601C025F
Manufacturer CREE
Description GaN MMIC Power Amplifier
Published Feb 3, 2019
Detailed Description CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron M...
Datasheet PDF File CMPA601C025F PDF File

CMPA601C025F
CMPA601C025F

Overview
CMPA601C025F 25 W, 6.
0 - 12.
0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.
25 μm gate length fabrication process.
The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth.
The GaN HEMT MMIC is housed in a thermally-enhanced, 10lead 25 mm x 9.
9 mm metal/ceramic flanged package.
It offers high gain and superior efficiency in a small footprint package at 50 ohms.
PaPcNka: gCeMTPyAp6e0: 414C0022153F Typical Performance Over 6.
0-12.
0 GHz (TC = 25˚C) Parameter 6.
0 GHz 7.
5 GHz Small Signal Gain ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)