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CMPA601C025F Datasheet PDF

Wolfspeed
Part Number CMPA601C025F
Manufacturer Wolfspeed
Title Power Amplifier
Description The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a sil...
Features
• 34 dB Small Signal Gain

• 40 W Typical PSAT Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.172 x 0.239 x 0.004 inches Applications
• Jamming Amplifiers
• Test Equipment Amplifiers
• Broadband Amplifiers Rev 4.1
  – April 2020 4600 Silicon Drive | Durha...

File Size 1.02MB
Datasheet PDF File CMPA601C025F PDF File


CMPA601C025F CMPA601C025F CMPA601C025F




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CMPA601C025D : Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved. PN: CMPA601C025D Typical Performance Over 6.0-12.0 GHz.

CMPA601C025F : CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms. PaPcNka: gCeMTPyAp6e0: 414C0022153F Typical Performance Over 6.0-12.0 GHz (TC = 25˚C) Parameter 6.0 GHz 7.5 GHz Small Signal Gain .




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