Si552

Si550 : The Si550 VCXO utilizes Silicon Laboratories’ advanced DSPLL® circuitry to provide a low-jitter clock at high frequencies. The Si550 supports any frequency from 10 to 945 MHz and select frequencies to 1417 MHz. Unlike traditional VCXOs, where a diffe.

Si550 : The Si550 VCXO utilizes Skyworks Solutions’ advanced DSPLL® circuitry to provide a low-jitter clock at high frequencies. The Si550 supports any frequency from 10 to 945 MHz and select frequencies to 1417 MHz. Unlike traditional VCXOs, where a different crystal is required for each output frequency, the Si550 uses one fixed crystal to provide a wide range of output frequencies. This IC-based approach allows the crystal resonator to provide exceptional frequency stability and reliability. In addition, DSPLL clock synthesis provides superior supply noise rejection, simplifying the task of generating low-jitter clocks in noisy environments typically found in communication systems. The Si550 IC-.

SI5504BDC : www.vishay.com Si5504BDC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 -30 RDS(on) () 0.065 at VGS = 10 V 0.100 at VGS = 4.5 V 0.140 at VGS = -10 V 0.235 at VGS = -4.5 V ID (A) 4a 4a -3.7 -2.8 Qg (TYP.) 2 nC 2.2 nC 1206-8 ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.8 mm 1 3.0 mm Top View 1 4 G2 3 S2 2 G1 S1 Bottom View FEATURES • TrenchFET® Power MOSFETs • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC for portable applications • Load switch D1 S2 G2 G1 Available Marking Code: EF Ordering Information: Si5504BDC-T1-E3 (Lead (Pb)-free) Si5504BDC-T1-GE3 (Le.

SI5504DC : Complementary 30 V (D-S) MOSFET Si5504DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.085 at VGS = 10 V 0.143 at VGS = 4.5 V P-Channel - 30 0.165 at VGS = - 10 V 0.290 at VGS = - 4.5 V ID (A) ± 3.9 ± 3.0 ± 2.8 ± 2.1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EA XX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free) Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS.

SI5509DC : Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.052 at VGS = 4.5 V 0.084 at VGS = 2.5 V 0.090 at VGS = - 4.5 V P-Channel - 20 0.160 at VGS = - 2.5 V ID (A)a 6.1a 4.8a - 4.8a - 3.6a Qg (Typ.) 3.9 nC 3.8 nC 1206-8 ChipFET® FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1 S1 D1 D1 G1 S2 D2 G2 D2 D1 Marking Code ED XXX Lot Traceability G1 and Date Code Part # Code S2 G2 Bottom View Ordering Information: Si5509DC-T1-E3 (Lead (Pb)-free) Si.

SI5511DC : www.DataSheet.co.kr Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (Ω) 0.055 at VGS = 4.5 V 0.090 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.256 at VGS = - 2.5 V ID (A) 4a,g 4a,g - 3.6 a FEATURES Qg (Typ) 4.2 nC • TrenchFET® Power MOSFETs APPLICATIONS • Buck-Boost - DSC - Portable Devices RoHS COMPLIANT P-Channel - 30 - 2.7a 2.85 nC 1206-8 Chip-FET ® 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 Marking Code EE XXX G2 G1 Lot Traceability and Date Code Part # Code S1 Bottom View Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) D2 P-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Para.

SI5513CDC : www.DataSheet.co.kr Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.055 at VGS = 4.5 V 0.085 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.255 at VGS = - 2.5 V ID (A)a Qg (Typ.) 4g 4g - 3.7 - 2.9 2.6 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC P-Channel - 20 3.6 nC APPLICATIONS • Load Switch for Portable Devices D1 S2 1206-8 ChipFET® 1 S1 D1 D1 D2 D2 G1 S2 G2 Marking Code EG XXX G1 Lot Traceability and Date Code S1 G2 Part # Code D2 P-Channel MOSFET Bottom View Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) S.

SI5513DC : www.DataSheet.co.kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 rDS(on) (W) 0.075 @ VGS = 4.5 V 0.134 @ VGS = 2.5 V 0.155 @ VGS = −4.5 V 0.260 @ VGS = −2.5 V ID (A) 4.2 3.1 −2.9 −2.2 Qg (Typ) 4 3 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EB XX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Part # Code Ordering Information: Si5513DC-T1 Si5513DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Dra.

SI5515CDC : www.DataSheet.co.kr Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.036 at VGS = 4.5 V N-Channel 20 0.041 at VGS = 2.5 V 0.050 at VGS = 1.8 V 0.100 at VGS = - 4.5 V P-Channel - 20 0.120 at VGS = - 2.5 V 0.156 at VGS = - 1.8 V 1206-8 ChipFET® FEATURES ID (A)a Qg (Typ.) 4g 4g 4 g 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC - 4g - 4g - 3.8 6.2 nC APPLICATIONS • Load Switch for Portable Devices D1 1 S2 S1 D1 D1 3. 0 m m Marking Code G1 S2 EH XXX G2 D2 1.8 mm G2 Lot Traceability and Date Code G1 D2 Part # Code S1 N-Channel MOSFET .

SI5515DC : Complementary 20 V (D-S) MOSFET Si5515DC Vishay Siliconix PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) 0.040 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.052 at VGS = 1.8 V 0.086 at VGS = - 4.5 V 0.121 at VGS = - 2.5 V 0.171 at VGS = - 1.8 V ID (A) 5.9 5.6 5.2 - 4.1 - 3.4 - 2.9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Devices 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EC XXX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: .

SI5517DU : www.vishay.com Si5517DU Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.9 mm 1 3.0 mm Top View Marking code: EA 1 4 G2 3 S2 2 G1 S1 Bottom View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 4.5 V RDS(on) () at VGS = ± 2.5 V RDS(on) () at VGS = ± 1.8 V Qg typ. (nC) ID (A) a Configuration 20 -20 0.039 0.072 0.045 0.100 0.055 0.131 6 5.5 6 -6 N- and p-pair FEATURES • TrenchFET® power MOSFETs • Thermally enhanced PowerPAK ChipFET package - Small footprint area - Low on-resistance - Thin 0.8 mm profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991.

SI5519DU : www.DataSheet.co.kr Si5519DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.036 at VGS = 4.5 V 0.063 at VGS = 2.5 V 0.064 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V ID (A)a Qg (Typ.) 6.0 6.0 - 6.0 - 6.0 6.0 nC 5.4 nC FEATURES • Halogen-free • TrenchFET® Power MOSFETs RoHS APPLICATIONS • Portable DC-DC Applications COMPLIANT P-Channel - 20 PowerPAK ChipFET Dual D1 1 S1 G1 D1 S2 2 3 S2 G2 4 G2 8 7 G1 Marking Code EB XXX Lot Traceability and Date Code Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET D1 D2 6 5 D2 Bottom View Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS .

Si552 :  Low-jitter clock generation  Optical modules  Clock and data recovery The Si552 dual-frequency VCXO utilizes Silicon Laboratories’ advanced DSPLL® circuitry to provide a very low jitter clock for all output frequencies. The Si552 is available with any-rate output frequency from 10 to 945 MHz a.

Si554 :  Low jitter clock generation  Optical modules  Clock and data recovery The Si554 quad-frequency VCXO utilizes Skyworks Solutions’ advanced DSPLL® circuitry to provide a very low jitter clock for all output frequencies. The Si554 is available with any-rate output frequency from 10 to 945 MHz and selected frequencies to 1400 MHz. Unlike traditional VCXOs, where a different crystal is required for each output frequency, the Si554 uses one fixed crystal frequency to provide a wide range of output frequencies. This IC-based approach allows the crystal resonator to provide exceptional frequency stability and reliability. In addition, DSPLL clock synthesis provides superior supply noise reject.

SI554 :  Low jitter clock generation  Optical modules  Clock and data recovery The Si554 quad-frequency VCXO utilizes Silicon Laboratories’ advanced DSPLL® circuitry to provide a very low jitter clock for all output frequencies. The Si554 is available with any-rate output frequency from 10 to 945 MHz and selected frequencies to 1400 MHz. Unlike traditional VCXOs, where a different crystal is required for each output frequency, the Si554 uses one fixed crystal frequency to provide a wide range of output frequencies. This IC-based approach allows the crystal resonator to provide exceptional frequency stability and reliability. In addition, DSPLL clock synthesis provides superior supply noise reje.