Transistor
2SD601A
Silicon
NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.
8 –0.
3
+0.
2
Unit: mm
s Features
q q q
0.
65±0.
15
+0.
25 1.
5 –0.
05
0.
65±0.
15
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
(Ta=25˚C)
Ratings 60 50 7 200 100 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
0.
95
2.
9 –0.
05
1
1.
9±0.
2
+0.
2
0.
95
3 0.
4 –0.
05
+0.
1
2
1.
45
1.
1 –0.
1
+0.
2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector cu...