Transistor
2SD661, 2SD661A
Silicon
NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.
9±0.
1 1.
5 2.
5±0.
1 1.
0
1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
s Features
q q q
1.
5 R0.
9 R0.
9
0.
85
Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 35 55 35 55 7 200 100 400 150 –55 ~ +150
Unit
3 2 1
V
2.
5 2.
5
emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current C...