Transistor
2SD662, 2SD662B
Silicon
NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.
9±0.
1 1.
5 2.
5±0.
1 1.
0
1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
s Features
q q q
1.
5 R0.
9 R0.
9
0.
85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit
3
0.
55±0.
1
1.
25±0.
05
0.
45±0.
05
2
1
V
2.
5 2.
5
emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold ...