2SJ117
Silicon P-Channel MOS FET
ADE-208-1180 (Z) 1st.
Edition Mar.
2001 Application
High speed power switching
Features
• • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching
regulator, DC-DC converter and ultrasonic power oscillators.
Outline
TO-220AB
D
1
2
3 1.
Gate 2.
Drain (Flange) 3.
Source
G
S
2SJ117
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg
1
Ratings –400 ±20 –...