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2SJ107

Toshiba Semiconductor
Part Number 2SJ107
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet PDF File 2SJ107 PDF File

2SJ107
2SJ107

Overview
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.
0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.
) • Small package • Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg 25 −10 200 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
JEITA ― operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TOSHIBA 2-4E1C Weight: 0.
13 g (typ.
) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS VGS = 25 V, VDS = 0 ⎯ ⎯ 1.
0 nA V (BR) GDS VDS = 0, IG = 100 μA 25 ⎯ ⎯ V IDSS (Note 1) VDS = −10 V, VGS = 0 −2.
6 ⎯ −20 mA VGS (OFF) VDS = −10 V, ID = −0.
1 μA 0.
2 ⎯ 2.
0 V ⎪Yfs⎪ VDS = −10 V, VGS = 0, f = 1 kHz (Note 2) 12 30 ⎯ mS Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 105 ⎯ pF Crss VGD = 10 V, ID = 0, f = 1 MHz ⎯ 32 ⎯ pF RDS (ON) VDS = −10 mV, VGS = 0 (Note 2) ⎯ 40 ⎯ Ω Note 1: IDSS classification GR: −2.
6~−6.
5 mA, BL: −6~−12 mA, V: −10~−20 mA Note ...


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