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2SJ108

Toshiba Semiconductor
Part Number 2SJ108
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications ...
Datasheet PDF File 2SJ108 PDF File

2SJ108
2SJ108


Overview
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.
) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.
95 nV/Hz1/2 (typ.
) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High input impedance: IGSS = 1.
0 nA (max) (VGS = 25 V) · Complementary to 2SK370 · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 200 125 -55~125 Electrical Characteristics (Ta = 25°C) Unit V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.
13 g (typ.
) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = 25 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) VDS = -10 V, ID = -0.
1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 10 Hz NF (2) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 1 kHz Note: IDSS classification GR: -2.
6~-6.
5 mA, BL: -6.
0~-12 mA, V: -10~-20 mA Min Typ.
Max Unit ¾ ¾ 1.
0 nA 25 ¾ ¾ V -2.
6 ¾ -20 mA 0.
15 ¾ 2.
0 V 8 22 ¾ mS ¾ 105 ¾ pF ¾ 32 ¾ pF ¾ 1.
0 10 dB ¾ 0.
5 2 1 2003-03-25 2SJ108 2 2003-03-25 2SJ108 3 2003-03-25 2SJ108 4 2003-03-25 2SJ108 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to ...



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